Yuanjie Chen,Shaoyun Huang,Dong Pan,Jianhong Xue,Li Zhang,Jianhua Zhao,H. Q. Xu
Abstract:A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is: how to achieve strong and tunable spin - orbit interaction (SOI) in InSb nanosheets, and explore its physical origin and controllability. Specifically, the research aims to regulate the Rashba - type spin - orbit interaction in InSb nanosheets through dual - gate voltages, thereby providing a basis for the design and implementation of spintronics, spin - based qubits, and topological quantum devices.
### Summary of main problems:
1. **Achieving strong and tunable spin - orbit interaction**: By constructing a dual - gate InSb nanosheet field - effect device, researchers have shown that the spin - orbit interaction in InSb nanosheets can be effectively regulated by applying dual - gate voltages.
2. **Exploring the physical origin of spin - orbit interaction**: The research has found that at zero dual - gate voltage, there is an inherent spin - orbit interaction in InSb nanosheets, and its physical origin is attributed to the inherent asymmetry in the device layer structure.
3. **Application prospects**: InSb nanosheets with strong and controllable spin - orbit interaction can simplify the design and implementation of spintronic devices, spin - based quantum devices, and topological quantum devices.
### Key technical means:
- **Dual - gate regulation**: Regulate the electric field perpendicular to the InSb nanosheet through dual - gate voltages, and then regulate the spin - orbit interaction.
- **Low - temperature magnetotransport measurement**: Using magnetoconductance measurement under low magnetic fields, key parameters such as carrier density, mean free path, coherence length, and spin - orbit interaction strength are extracted.
- **Band diagram simulation**: Band diagram simulation is carried out by commercial software COMSOL to explain the existence of the inherent spin - orbit interaction at zero dual - gate voltage and its physical mechanism.
### Results and conclusions:
- The research shows that the Rashba - type spin - orbit interaction in InSb nanosheets can be effectively regulated by dual - gate voltages.
- Even at zero dual - gate voltage, there is a relatively strong spin - orbit interaction in InSb nanosheets, and its physical origin is the inherent structural asymmetry caused by the band offset in the HfO₂ - InSb - SiO₂ heterostructure.
- This research provides important experimental and theoretical bases for the future development of spintronics, quantum computing, and topological quantum devices.
Through these studies, the author has proven that InSb nanosheets are a material with strong and tunable spin - orbit interaction, laying a foundation for the further development of related fields.