Abstract:We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is **how to efficiently regulate the spin - orbit interaction (SOI) in InAs nanosheets by electrical means**. Specifically, by constructing a dual - gate field - effect device, the author studied how to efficiently regulate the spin - orbit interaction in InAs nanosheets by adjusting the dual - gate voltage while keeping the carrier density constant. ### Main problems and objectives: 1. **Regulating spin - orbit interaction (SOI)**: - The author hopes to experimentally verify whether the SOI in InAs nanosheets can be effectively regulated by electrical means (i.e., adjusting the dual - gate voltage). - In particular, study the tunability of Rashba - type SOI and reveal the influence of Dresselhaus - type SOI. 2. **Electron transport properties**: - Study how the electron transport properties of InAs nanosheets change from weak anti - localization (WAL) to weak localization (WL) and then back to weak anti - localization under different dual - gate voltages. - This transition process can help understand the specific influence of SOI on electron transport. 3. **Combination of theory and simulation**: - Explain the experimentally observed phenomena through energy band diagram simulation and provide in - depth understanding of the physical mechanism. ### Experimental methods and results: - **Dual - gate field - effect device**: The author fabricated a dual - gate field - effect device based on a free - standing InAs nanosheet grown by molecular beam epitaxy. - **Magnetoconductance measurement**: The quantum transport properties of InAs nanosheets under different dual - gate voltages were studied by low - field magnetoconductance measurement. - **Energy band structure simulation**: The energy band diagram of the HfO₂/InAs/SiO₂ sandwich structure was simulated by Poisson equation to explain the variation mechanism of Rashba SOI. ### Key findings: - **Efficient regulation of SOI**: By adjusting the dual - gate voltage, efficient regulation of Rashba SOI was achieved, and the existence of Dresselhaus SOI was revealed. - **Transition of electron transport properties**: While keeping the carrier density constant, the transition of electron transport properties from WAL to WL and then back to WAL was successfully achieved by changing the dual - gate voltage. - **Regulation of Rashba coupling constant α**: The experimental results show that the Rashba coupling constant α can be regulated in a wide range, from negative to positive values. In conclusion, this paper demonstrates the possibility of efficiently regulating the spin - orbit interaction in InAs nanosheets by electrical means, providing important experimental evidence and theoretical support for the future development of new electronic devices based on SOI.

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