Strong tuning of Rashba spin orbit interaction in single InAs nanowires

Dong Liang,Xuan P.A. Gao

DOI: https://doi.org/10.1021/nl301325h

2012-05-08

Abstract:A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and tuning of electric field induced Rashba spin orbit interaction in InAs nanowires where a strong electric field is created either by a double gate or a solid electrolyte surrounding gate. In particular, the electrolyte gating enables six-fold tuning of Rashba coefficient and nearly three orders of magnitude tuning of spin relaxation time within only 1 V of gate bias. Such a dramatic tuning of spin orbit interaction in nanowires may have implications in nanowire based spintronic devices.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to regulate the Rashba spin - orbit interaction (SOI) in InAs nanowires through an electric field in order to achieve efficient manipulation of electron spins. Specifically, the main research objectives include:

1. **Generate and regulate Rashba SOI**: By applying a strong electric field on InAs nanowires, generate and regulate the Rashba spin - orbit interaction. Traditional gate - voltage regulation methods usually change the carrier density at the same time, which makes it difficult to distinguish the effect of pure electric - field regulation. In this paper, pure electric - field regulation is achieved through two methods: the double - gate structure and the solid - state electrolyte gate.

2. **Improve the regulation efficiency**: Using solid - state electrolyte (PEO/LiClO₄) as the gate dielectric can generate a stronger electric field at a lower gate voltage, thus more effectively regulating the Rashba coefficient (α). Experimental results show that within a gate - voltage range of 1V, the Rashba coefficient can be enhanced six - fold, and the spin relaxation time (τₛᴏ) can vary within three orders of magnitude.

3. **Explore the application potential of new spintronic devices**: Through the efficient regulation of Rashba SOI in InAs nanowires, its application prospects in future nano - scale spintronic devices are demonstrated, such as high - speed electronic devices based on spin - field - effect transistors (spin - FET).

### Main methods and techniques

- **Double - gate structure**: By applying top and bottom gate voltages on InAs nanowires, a lateral electric field is generated without changing the carrier density. This method verifies the origin of Rashba SOI and shows its symmetry.

- **Solid - state electrolyte gate**: Using a mixture of polyethylene oxide (PEO) and lithium perchlorate (LiClO₄) as the gate dielectric can generate a high - intensity electric field at a small gate voltage, thereby significantly enhancing Rashba SOI.

### Experimental results

- **Double - gate structure**: Within a gate - voltage range of ±30V, the Rashba coefficient α increased nearly two - fold and was independent of the electric - field direction.

- **Solid - state electrolyte gate**: Within a gate - voltage range of 1V, the Rashba coefficient α was enhanced six - fold, and the spin relaxation time τₛᴏ changed from 5×10⁻¹⁴ seconds to 2×10⁻¹¹ seconds, showing a very large regulation range.

These results indicate that through appropriate electric - field regulation methods, efficient Rashba SOI regulation can be achieved in InAs nanowires, providing new ideas and technical means for the design of future spintronic devices.