Abstract:Electrons in graphene have a pseudospin, but controlling this degree of freedom is challenging. Evidence now suggests that the moiré superlattices arising in two-dimensional heterostructures can be used to electrically manipulate pseudospins. Electrons in graphene are described by relativistic Dirac–Weyl spinors with a two-component pseudospin1,2,3,4,5,6,7,8,9,10,11,12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum Hall effect2,3, and Klein tunnelling4,5 in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sublattices at the atomic level. Graphene/boron nitride moiré superlattices, where a fast sublattice oscillation due to boron and nitrogen atoms is superimposed on the slow moiré period, provides an attractive approach to engineer the electron pseudospin in graphene13,14,15,16,17,18. This unusual moiré superlattice leads to a spinor potential with unusual hybridization of electron pseudospins, which can be probed directly through infrared spectroscopy because optical transitions are very sensitive to excited state wavefunctions. Here, we perform micro-infrared spectroscopy on a graphene/boron nitride heterostructure and demonstrate that the moiré superlattice potential is dominated by a pseudospin-mixing component analogous to a spatially varying pseudomagnetic field. In addition, we show that the spinor potential depends sensitively on the gate-induced carrier concentration in graphene, indicating a strong renormalization of the spinor potential from electron–electron interactions.

Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors

Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Tunable Spin‐Polarized States in Graphene on a Ferrimagnetic Oxide Insulator (Adv. Mater. 8/2024)

Electric control of spin in monolayer WSe2 field effect transistors

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Spin-Orbit Proximity Effect in Graphene

Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene

Modulation of Spin Dynamics in 2D Transition‐Metal Dichalcogenide via Strain‐Driven Symmetry Breaking

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Gate-tunable Large Spin Polarization in a Few-Layer Black Phosphorus-Based Spintronic Device

Modulating Spin Polarization and Spin-Orbit Interaction by Submonolayer Engineering at Interfaces

Strong interface-induced spin-orbit coupling in graphene on WS2

Gate-dependent Pseudospin Mixing in Graphene/boron Nitride Moiré Superlattices

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect

Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.