Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.

Chunming Yin,Hongtao Yuan,Xinqiang Wang,Shitao Liu,Shan Zhang,Ning Tang,Fujun Xu,Zhuoyu Chen,Hidekazu Shimotani,Yoshihiro Iwasa,Yonghai Chen,Weikun Ge,Bo Shen
DOI: https://doi.org/10.1021/nl400153p
IF: 10.8
2013-01-01
Nano Letters
Abstract:Electrically manipulating electron spins based on Rashba spin-orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.
What problem does this paper attempt to address?