Abstract:The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead to novel opto-spintronic devices. The CPGE of three-dimensional topological insulator Bi2Te3 with different substrates and thicknesses has been systematically investigated. It is found that the CPGE current can be dramatically tuned by adopting different substrates. The CPGE current of the Bi2Te3 films on Si substrates are more than two orders larger than that on SrTiO3 substrates when illuminated by 1064 nm light, which can be attributed to the modulation effect due to the spin injection from Si substrate to Bi2Te3 films, larger light absorption coefficient, and stronger inequivalence between the top and bottom surface states for Bi2Te3 films grown on Si substrates. The excitation power dependence of the CPGE current of Bi2Te3 films on Si substrates shows a saturation at high power especially for thicker samples, whereas that on SrTiO3 substrates almost linearly increases with excitation power. Temperature dependence of the CPGE current of Bi2Te3 films on Si substrates first increases and then decreases with decreasing temperature, whereas that on SrTiO3 substrates changes monotonously with temperature. These interesting phenomena of the CPGE current of Bi2Te3 films on Si substrates are related to the spin injection from Si substrates to Bi2Te3 films. Our work not only intrigues new physics but also provides a method to effectively manipulate the helicity-dependent photocurrent via spin injection.

Observation of the Surface Circular Photogalvanic Effect in Inn Films

Observation of photogalvanic current for interband absorption in InN films at room temperature

Detection of Spin-Orbit Coupling of Surface Electron Layer Via Reciprocal Spin Hall Effect in InN Films

Circular photogalvanic effect at inter-band excitation in InN

Observation of Interface Dependent Spin Polarized Photocurrents in Inas/Gasb Superlattice

Anomalous Surface Potential Behavior Observed In Inn By Photo-Assisted Kelvin Probe Force Microscopy

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Lattice Polarity Detection of Inn by Circular Photogalvanic Effect

Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 Via Spin Injection

Helicity Dependent Photocurrent in Electrically Gated (bi1−x Sb X )2te3 Thin Films

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures

Strong Circular Photogalvanic Effect in ZnO Epitaxial Films

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Photocurrent measurements in topological insulator $\text{Bi}_2\text{Se}_3$ nanowires

Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN.

Intrinsic Spin Photogalvanic Effect in Nonmagnetic Insulator

Observation Of Electric Current Induced By Optically Injected Spin Current

Photogalvanic Effect Induced Fully Spin Polarized Current and Pure Spin Current in Zigzag SiC Nanoribbons.

In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

In-plane Magnetic Field Induced Helicity Dependent Photogalvanic Effect on the Surface States of Topological Insulators (Bixsb1−x)2te3

Circular Photogalvanic Effect of the Two-Dimensional Electron Gas in AlxGa1−xN∕GaN Heterostructures under Uniaxial Strain