In-plane Magnetic Field Induced Helicity Dependent Photogalvanic Effect on the Surface States of Topological Insulators (Bixsb1−x)2te3

Shenzhong Chen,Jinling Yu,Kejing Zhu,Xiaolin Zeng,Yonghai Chen,Yu Liu,Yang Zhang,Shuying Cheng,Ke He
DOI: https://doi.org/10.1063/5.0058706
IF: 2.877
2021-01-01
Journal of Applied Physics
Abstract:A hallmark signature of the three-dimensional (3D) topological insulator (TI) is that the spin-momentum locked massless Dirac fermions populate its surface states, where the carrier spins are locked to their momentum. Here, we report on the magnetic-field induced helicity dependent photogalvanic effect (MHPGE) of 3D TI thin films Bi2Te3 or (BixSb1−x)2Te3 of different thicknesses excited by near-infrared (1064 nm) under an in-plane magnetic field. It is found that the MHPGE current Jcx under the longitudinal geometry, i.e., Jcx∥Bx, is induced by the Larmor procession, while that under the transverse geometry, i.e., Jcx∥By, is mainly introduced by the hexagonal warping, which can be enhanced by the in-plane magnetic field. Our work demonstrates the possibility to tune the spin-polarized photocurrent of the surface states in 3D TIs via a magnetic field, which may be utilized to design new kinds of opto-spintronic devices.
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