Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Joseph Sklenar,Yingjie Zhang,Matthias Benjamin Jungfleisch,Youngseok Kim,Yiran Xiao,Gregory J. MacDougall,Matthew J. Gilbert,Axel Hoffmann,Peter Schiffer,Nadya Mason
DOI: https://doi.org/10.1063/5.0052301
IF: 4
2021-06-07
Applied Physics Letters
Abstract:Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi<sub>2</sub>Se<sub>3</sub> TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. By applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (∼6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.
physics, applied
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