Abstract:Topological insulators (TIs) have shown promise as a spin-generating layer to switch the magnetization state of ferromagnets via spin-orbit torque (SOT) due to charge-to-spin conversion efficiency of the TI surface states that arises from spin-momentum locking. However, when TIs are interfaced with conventional bulk ferromagnetic metals, the combination of charge transfer and hybridization can potentially destroy the spin texture and hamper the possibility of accessing the TI surface states. Here, we fabricate an all van der Waals (vdW) heterostructure consisting of molecular beam epitaxy grown bulk-insulating Bi2Se3 and exfoliated 2D metallic ferromagnet Fe3GeTe2 (FGT) with perpendicular anisotropy. By detecting the magnetization state of the FGT via anomalous Hall effect and magneto-optical Kerr effect measurements, we determine the critical switching current density for magnetization switching to be Jc ≈ 1.2 × 106 A/cm2, the lowest reported for the switching of a perpendicular anisotropy ferromagnet using Bi2Se3. From second harmonic Hall measurements, we further determine the SOT efficiency (ξDL) to be in the range of 1.8 ± 0.3 and 1.4 ± 0.08 between 5 and 150 K, comparable to the highest values reported for Bi2Se3. Our density functional theory calculations find that the weak interlayer interactions at the Bi2Se3/FGT interface lead to a weakened dipole at the interface and suppress the proximity induced magnetic moment on Bi2Se3. This enables direct access to the TI surface states contributed by the first quintuple layer, where the spins are singly degenerate with significant net in-plane spin polarization. Our results highlight the clear advantage of all-vdW heterostructures with weak interlayer interactions that can enhance SOT efficiency and minimize critical current density, an important step toward realizing next generation low-power nonvolatile memory and spintronic devices.

Observation of large magnetoresistance switching in topological-insulator/ferromagnetic-metal heterostructure with perpendicular magnetic anisotropy

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Nonvolatile magnetization switching in a single-layer magnetic topological insulator

Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures

Unidirectional Magneto-Resistance in Modulation-doped Magnetic Topological Insulators.

Room temperature spin-orbit torque switching induced by a topological insulator

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Switching of a Magnet by Spin‐Orbit Torque from a Topological Dirac Semimetal

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator

Magnetotransport Signatures of Superconducting Cooper Pairs Carried by Topological Surface States in Bismuth Selenide

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Proximity induced high-temperature magnetic order in topological insulator--ferrimagnetic insulator heterostructure.

Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: $BiSbTe_{1.5}Se_{1.5}$ and $Ni_{80}Fe_{20}$ heterostructure

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet