Chiral Symmetry Breaking for Deterministic Switching of Perpendicular Magnetization by Spin–Orbit Torque
Hao Wu,John Nance,Seyed Armin Razavi,David Lujan,Bingqian Dai,Yuxiang Liu,Haoran He,Baoshan Cui,Di Wu,Kin Wong,Kemal Sobotkiewich,Xiaoqin Li,Gregory P. Carman,Kang L. Wang
DOI: https://doi.org/10.1021/acs.nanolett.0c03972
IF: 10.8
2020-12-18
Nano Letters
Abstract:Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin–orbit torque (SOT) devices, a fundamental question arises: how can the symmetry of the perpendicular magnetic moment be broken by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the antisymmetric Dzyaloshinskii–Moriya interaction (DMI) can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, the dynamic noncollinear spin textures are formed under the current-driven SOT, and thus, the chiral symmetry of these dynamic spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (<i>z</i>) gradient of magnetic properties as a practical solution for the wafer-scale manufacture of SOT devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c03972?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c03972</a>.Micromagnetic simulation results; BLS measurements; methods for the composition gradient and the wedged thickness; asymmetric magnetic domain nucleation; anomalous Hall loops; angular dependence of field-free SOT switching; SOT switching under a series of in-plane fields; SOT switching with uniform magnetic properties; harmonic Hall measurement; method to obtain <i>H</i><sub>k</sub>; <i>M</i>–<i>H</i> loops; Pt/Co (wedged)/MgO system; field-free SOT switching with opposite ∇<sub><i>z</i></sub><i>M</i><sub>s</sub>; angular dependent magnetoresistance (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03972/suppl_file/nl0c03972_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology