Abstract:Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that has an out-of-plane component, which is crucial in switching perpendicular magnetization of adjacent ferromagnetic (FM) layer in the field-free condition. In this work, we analytically derive the threshold current of field-free perpendicular magnetization switching using the anomalous SOT. And we numerically calculate the track of the magnetic moment in a FM free layer when an applied current is smaller and greater than the threshold current. After that, we study the applied current dependence of the switching time and the switching energy consumption, which shows the minimum energy consumption decreases as out-of-plane torque proportion increases. Then we study the dependences of the threshold current on anisotropy strength, out-of-plane torque proportion, FM free layer thickness and Gilbert damping constant, and the threshold current shows negative correlation with the out-of-plane torque proportion and positive correlation with the other three parameters. Finally, we demonstrate that when the applied current is smaller than the threshold current, although it cannot switch the magnetization of FM free layer, it can still equivalently add an effective exchange bias field H_{bias} on the FM free layer. The H_{bias} is proportional to the applied current J_{SOT}, which facilitates the determination of the anomalous SOT efficiency. This work helps us to design new spintronic devices that favor field-free switching perpendicular magnetization using the anomalous SOT, and provides a way to adjust the exchange bias field, which is helpful in controlling FM layer magnetization depinning.

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

The Central Role of Tilted Anisotropy for Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching with a Noncollinear In-Plane Assisting Magnetic Field

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Field-free Spin–orbit-Torque Switching of Perpendicular Magnetization Aided by Uniaxial Shape Anisotropy

Field-Free Magnetization Switching in a Ferromagnetic Single Layer Through Multiple Inversion Asymmetry Engineering.

Deterministic field-free switching of perpendicular magnetization by spin–orbit torques originating from in-plane magnetized Co2MnAl

Field-Free Magnetization Switching Induced by Bulk Spin-Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Spin–Orbit Torque-Driven Magnetic Switching of Co/Pt-CoFeB Exchange Spring Ferromagnets

Controllable Field-Free Switching of Perpendicular Magnetization Through Bulk Spin-Orbit Torque in Symmetry-Broken Ferromagnetic Films

Field-Free Switching of Perpendicular Magnetization Induced by Longitudinal Spin-Orbit-Torque Gradient

Perpendicular magnetic anisotropy tilting for spin–orbit torque-induced field-free switching of magnetization

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque Without an External Magnetic Field by Engineering a Tilted Anisotropy

Field-free spin–orbit torque-induced magnetization switching in a miscut-substrate driven slant-perpendicular magnetic anisotropy system

Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

Electrical Switching of Perpendicular Magnetization in a Single Ferromagnetic Layer