Abstract:The requirement of the external magnetic field to deterministically switch the ferromagnetic layer with perpendicular magnetic anisotropy (PMA) hinders the application of spin‐orbit torque devices. Room temperature field‐free switching for PMA is demonstrated using spin currents with the out‐of‐plane spin polarization induced by noncollinear antiferromagnets Mn3Ir, and the switching current pulse duration can be reduced to 3.3 ns. Manipulation of the magnetization by spin‐orbit torque (SOT) stands as a crucial advancement in spintronics due to its merits in energy‐efficient and high‐speed operation. However, the conventional SOT devices involving a heavy metal/ferromagnet cannot deterministically switch the perpendicularly magnetized ferromagnet without an external magnetic field, which hinders its practical implementation. Here, room temperature field‐free switching for perpendicularly magnetized ferromagnets is demonstrated using spin currents with the out‐of‐plane spin polarization induced by noncollinear antiferromagnets L12‐Mn3Ir. Both in‐plane and out‐of‐plane spin polarizations are observed, and the tilting angle of the spin polarization is estimated to be ≈10°. The spin Hall conductivity of out‐of‐plane spin is 1.43 × 104 ћ/2e·Ω−1m−1, which is the largest among several 2D and antiferromagnetic materials, including WTe2, RuO2, and Mn3GaN. Furthermore, field‐free SOT switching is demonstrated with an ns‐current pulse, and the current density is comparable with the reported values of the field‐assisted pulse switching. This work paves the way for employing noncollinear antiferromagnets for wafer‐scale spintronic device applications.

Perpendicular magnetic anisotropy tilting for spin–orbit torque-induced field-free switching of magnetization

The Central Role of Tilted Anisotropy for Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Field-free spin–orbit torque-induced magnetization switching in a miscut-substrate driven slant-perpendicular magnetic anisotropy system

Switching of Perpendicular Magnetization by Spin-Orbit Torque

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Field-Free Switching of Perpendicular Magnetization Induced by Longitudinal Spin-Orbit-Torque Gradient

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Efficient Spin-Orbit-Torque Switching Assisted by an Effective Perpendicular Field in a Magnetic Trilayer

Field‐Free Switching of Perpendicular Magnetization by Anisotropic Spin Hall Effect in Mn3Ir

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Field-free Switching of Perpendicular Magnetization at Room Temperature Using Out-of-plane Spins from TaIrTe4

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Tilted perpendicular anisotropy-induced spin-orbit ratchet effects