Abstract:The requirement of the external magnetic field to deterministically switch the ferromagnetic layer with perpendicular magnetic anisotropy (PMA) hinders the application of spin‐orbit torque devices. Room temperature field‐free switching for PMA is demonstrated using spin currents with the out‐of‐plane spin polarization induced by noncollinear antiferromagnets Mn3Ir, and the switching current pulse duration can be reduced to 3.3 ns. Manipulation of the magnetization by spin‐orbit torque (SOT) stands as a crucial advancement in spintronics due to its merits in energy‐efficient and high‐speed operation. However, the conventional SOT devices involving a heavy metal/ferromagnet cannot deterministically switch the perpendicularly magnetized ferromagnet without an external magnetic field, which hinders its practical implementation. Here, room temperature field‐free switching for perpendicularly magnetized ferromagnets is demonstrated using spin currents with the out‐of‐plane spin polarization induced by noncollinear antiferromagnets L12‐Mn3Ir. Both in‐plane and out‐of‐plane spin polarizations are observed, and the tilting angle of the spin polarization is estimated to be ≈10°. The spin Hall conductivity of out‐of‐plane spin is 1.43 × 104 ћ/2e·Ω−1m−1, which is the largest among several 2D and antiferromagnetic materials, including WTe2, RuO2, and Mn3GaN. Furthermore, field‐free SOT switching is demonstrated with an ns‐current pulse, and the current density is comparable with the reported values of the field‐assisted pulse switching. This work paves the way for employing noncollinear antiferromagnets for wafer‐scale spintronic device applications.

Field-free Switching of Perpendicular Magnetization at Room Temperature Using Out-of-plane Spins from TaIrTe4

Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal

Field‐Free Switching of Perpendicular Magnetization by Anisotropic Spin Hall Effect in Mn3Ir

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Field-free spin–orbit torque-induced switching of perpendicular magnetization at room temperature in WTe2/ferromagnet heterostructures

Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

Field-free switching in perpendicular Ta/CoFeB/MgO multilayers achieved by annealing temperature gradient

Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4

Field-Free Switching of Perpendicular Magnetization in an Ultrathin Epitaxial Magnetic Insulator

Field‐Free and Energy‐Efficient Switching of a Ferrimagnetic Insulator Through Orbital Currents of Copper

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe 4

Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures

Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Deterministic switching of perpendicular magnetization by out-of-plane anti-damping magnon torques

Perpendicular magnetic anisotropy tilting for spin–orbit torque-induced field-free switching of magnetization

Room-temperature Van Der Waals Magnetoresistive Memories with Data Writing by Orbital Current in the Weyl Semimetal TaIrTe4 4