Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Jintao Ke,Linzhu Bi,Zhaozhao Zhu,He Bai,Guansong Li,Chaoqun Hu,Pengju Wang,Ying Zhang,Jian‐Wang Cai

DOI: https://doi.org/10.1002/admi.202300632

IF: 5.4

2023-10-10

Advanced Materials Interfaces

Abstract:Field‐free switching of perpendicular TmIG films with a significantly enhanced anomalous Hall resistance readout signal is achieved by incorporating an ultrathin in‐plane anisotropic Co layer at the TmIG/Pt interface. The field‐free switching polarity is dependent on the in‐plane magnetization orientation of the Co layer when switching current parallel to its easy axis. Perpendicularly magnetized ferrimagnetic insulators offer great potential for the development of fast and energy‐efficient spintronic devices. However, a major challenge for these devices is the requirement of an auxiliary magnetic field to achieve spin‐orbit torque (SOT)‐driven magnetization switching, along with the extremely small electric read‐out signal from the adjacent heavy metal layer. In this work, an approach by introducing an ultrathin Co layer primarily with in‐plane magnetization at the interface of the Tm3Fe5O12/Pt bilayers, which enables field‐free deterministic switching of the perpendicular Tm3Fe5O12 layer is demonstrated. Meanwhile, it is observed that a large anomalous Hall resistance readout signal from the coupling‐induced perpendicular component of the interfacial Co, which is nearly two orders of magnitude larger than that observed in Tm3Fe5O12/Pt bilayers. The crucial role played by the Co layer in modifying the SOT is elucidated. This research represents a significant step toward the practical implementation of ferrimagnetic insulator devices.

materials science, multidisciplinary,chemistry