Magnetoresistive detection of perpendicular switching in a magnetic insulator

Silvia Damerio,Achintya Sunil,M. Mehraeen,Steven S.-L. Zhang,Can O. Avci

2023-11-13

Abstract:Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting its use in practical applications. Here, we demonstrate magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is a conducting ferrimagnet and serves as the reference layer, and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Technologically-feasible magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet is a breakthrough, as it opens broad avenues for novel insulating spintronic devices and concepts.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to achieve electrical detection of perpendicular magnetization reversal in magnetic insulators. Specifically, the researchers hope to overcome the inherent difficulties in electrical reading in insulating magnetic materials to promote the use of these materials in practical applications, especially in spintronics devices.

### Problem Background

Spintronics provides a promising path for efficient memory, logic, and computing technologies. However, the central challenge is how to electrically manipulate and detect magnetic states in devices. Although magnetization can be effectively controlled in conductive and insulating magnetic layers through spin - orbit torque, electrical reading of the magnetization of insulating magnetic layers has always been a difficult problem, which limits its use in practical applications.

### Research Objectives

The research objective of this paper is to demonstrate the detection of perpendicular magnetization reversal in a magnetic insulator - terbium iron garnet (TbIG) through a simple resistance read - out method. The researchers used a TbIG|Cu|TbCo sandwich structure, where TbCo is a conductive ferromagnet as a reference layer and Cu is a non - magnetic spacer layer. By injecting current into Cu|TbCo, the magnetization reversal of TbIG can be detected during an external magnetic field scan.

### Solutions

To achieve this goal, the researchers carried out the following work:

1. **Experimental Design**: A TbIG|Cu|TbCo sandwich structure was constructed, and the effects of changing the measurement temperature, TbCo composition, and Cu thickness on the sign and magnitude of magnetoresistance were studied.
2. **Theoretical Analysis**: Theoretical calculations were carried out based on the layer - resolved Boltzmann transport equation to verify the experimental results.

### Experimental Results

The study found that simple resistance read - out of perpendicular magnetization reversal in TbIG can be achieved through this structure. The key lies in the spin - dependent electron scattering effect at the TbIG|Cu interface, which leads to an obvious change in magnetoresistance. In addition, the experiment also revealed the laws of magnetoresistance change under different conditions, such as the influence of temperature, material composition, and spacer layer thickness.

### Significance

The significance of this research is that it provides a new solution for the application of insulating magnetic materials in spintronics devices. Especially for magnetic insulators with perpendicular magnetic anisotropy, this electrical detection method can be used to develop new - type memories and other spintronics devices, thus promoting the further development of this field.

### Formula Representation

The key formulas involved in the paper include the Boltzmann transport equation and its solution:

\[
v_z\frac{\partial g}{\partial z}-\frac{eE}{m}\frac{\partial f_0}{\partial v_x}=-\frac{g}{\tau}
\]

where:
- \(m\) is the effective mass
- \(\tau\) is the momentum relaxation time
- \(f_0\) is the equilibrium electron distribution function
- \(g(\mathbf{v}, z)\) is the deviation caused by the applied electric field
- \(E\) is the electric field strength in the x - direction

The general solution form is:

\[
g_{\pm}^{\uparrow (\downarrow)}(\mathbf{v}, z)=\frac{eE\tau}{m}\frac{\partial f_0}{\partial v_x}\left[1 + C_{\pm}^{\uparrow (\downarrow)}\exp\left(\mp\frac{z}{\tau |v_z|}\right)\right]
\]

Through these formulas, the researchers were able to explain the magnetoresistance change phenomena observed in the experiment.