Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Current-induced magnetization switching using electrically-insulating spin-torque generator

Current-induced Magnetization Switching in All-Oxide Heterostructures.

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Voltage-gated field-free spin–orbit torque switching in Pt/Co/Ir/MgO wedged structures

Magnetization Switching by Magnon-Mediated Spin Torque Through an Antiferromagnetic Insulator.

Spin-orbit Torque from a Ferromagnetic Metal

Single-layer spin-orbit-torque magnetization switching due to spin Berry curvature generated by minute spontaneous atomic displacement in a Weyl oxide

Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.

Magnetization Switching Induced by Electron- and Magnon-Mediated Spin Torque in Topological Insulator Devices (conference Presentation)

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin-orbit torque in ferromagnetic multilayers

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81fe19/Cuox/Tan Heterostructure

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Oscillatory spin-orbit torque switching induced by field-like torques

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque Without an External Magnetic Field by Engineering a Tilted Anisotropy

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer