Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer

Controlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit TorqueControlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit Torque

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide

Field-Free Switching of Perpendicular Magnetization Through Voltage-Gated Spin-Orbit Torque

An energy efficient way for quantitative magnetization switching

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Field-Free Magnetization Switching in a Ferromagnetic Single Layer Through Multiple Inversion Asymmetry Engineering.

Purely Electric-Driven Field-Free Magnetization Switching in L10-FePt Single Film for Reconfigurable Spin Logic Computing

Controllable Spin-Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Field-free Manipulation of Exchange Bias in Perpendicularly Magnetized Pt/Co/IrMn Structures by Spin-Orbit Torque

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Controllable Field-Free Switching of Perpendicular Magnetization Through Bulk Spin-Orbit Torque in Symmetry-Broken Ferromagnetic Films

Field-Free Magnetization Switching Induced by Bulk Spin-Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin-orbit torque in ferromagnetic multilayers

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Field-free Spin–orbit-Torque Switching of Perpendicular Magnetization Aided by Uniaxial Shape Anisotropy

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling