Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Field-free spin-orbit-torque switching of a single ferromagnetic layer with fourfold in-plane magnetic anisotropy

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer

Field-Free Magnetization Switching in a Ferromagnetic Single Layer Through Multiple Inversion Asymmetry Engineering.

Field‐Free Switching of Perpendicular Magnetization by Anisotropic Spin Hall Effect in Mn3Ir

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Ultrafast Field-Free Magnetization Switching Using Bi-Directional Spin Hall Current and Antiferromagnetic Interlayer Exchange

Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Field-free Switching of Perpendicular Magnetization in a Noncollinear Antiferromagnetic Mn3Sn/[Pt/Co]4 Heterostructure

Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching with a Noncollinear In-Plane Assisting Magnetic Field

Field-Free Switching of Perpendicular Magnetization Through Voltage-Gated Spin-Orbit Torque

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Field-free Spin–orbit-Torque Switching of Perpendicular Magnetization Aided by Uniaxial Shape Anisotropy

Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

Investigation of spin–orbit torque switching mechanism in crystalline ferromagnetic semiconductor

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect