Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Enhancing Spin–orbit Torques with a Low Voltage in Metallic Multi-Layered Heterostructures

Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin-orbit torque in ferromagnetic multilayers

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Enhanced Spin-Orbit Torque and Multilevel Current-Induced Switching in W/Co−Tb/Pt Heterostructure

Modulation of Field-Like Spin Orbit Torque in Heavy Metal/ferromagnet Heterostructures

Spin-Orbit Torque Magnetization Switching in MoTe2/Permalloy Heterostructures

Field-free switching of magnetization induced by spin–orbit torque in Pt/CoGd/Pt thin film

Controllable Spin-Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Electrical manipulation of magnetization in magnetic heterostructures with perpendicular anisotropy

Large Non-Volatile Tuning of Magnetism Mediated by Electric Field in Fe-Al/Pb(Mg1/3nb2/3)O-3-Pbtio3 Heterostructure

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Purely Electrical Controllable Complete Spin Logic in a Single Magnetic Heterojunction

Field-free Spin-Orbit Torque-Induced Perpendicular Magnetization Switching in YIG/Ta/CoTb/Pt

Controllable Field-Free Switching of Perpendicular Magnetization Through Bulk Spin-Orbit Torque in Symmetry-Broken Ferromagnetic Films

Field-free Manipulation of Exchange Bias in Perpendicularly Magnetized Pt/Co/IrMn Structures by Spin-Orbit Torque

Controlling Spin-Orbit Torque by Polarization Field in Multiferroic BiFeO3 Based Heterostructures

An energy efficient way for quantitative magnetization switching