Abstract:Modern magnetic-memory technology requires all-electric control of perpendicular magnetization with low energy consumption. While spin–orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) heterostructures<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="/articles/s41565-020-00826-8#ref-CR5">5</a> holds promise for applications in magnetic random access memory, until today, it has been limited to the in-plane direction. Such in-plane torque can switch perpendicular magnetization only deterministically with the help of additional symmetry breaking, for example, through the application of an external magnetic field<a href="/articles/s41565-020-00826-8#ref-CR2">2</a>,<a href="/articles/s41565-020-00826-8#ref-CR4">4</a>, an interlayer/exchange coupling<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41565-020-00826-8#ref-CR9">9</a> or an asymmetric design<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41565-020-00826-8#ref-CR14">14</a>. Instead, an out-of-plane SOT<a href="/articles/s41565-020-00826-8#ref-CR15">15</a> could directly switch perpendicular magnetization. Here we observe an out-of-plane SOT in an HM/FM bilayer of L11-ordered CuPt/CoPt and demonstrate field-free switching of the perpendicular magnetization of the CoPt layer. The low-symmetry point group (3m1) at the CuPt/CoPt interface gives rise to this spin torque, hereinafter referred to as 3m torque, which strongly depends on the relative orientation of the current flow and the crystal symmetry. We observe a three-fold angular dependence in both the field-free switching and the current-induced out-of-plane effective field. Because of the intrinsic nature of the 3m torque, the field-free switching in CuPt/CoPt shows good endurance in cycling experiments. Experiments involving a wide variety of SOT bilayers with low-symmetry point groups<a href="/articles/s41565-020-00826-8#ref-CR16">16</a>,<a href="/articles/s41565-020-00826-8#ref-CR17">17</a> at the interface may reveal further unconventional spin torques in the future.

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

In-situ Field Induced Enhancement of Damping-Like Field and Field-Free Switching in Perpendicularly Coupled Pt/Co and CoFeB Bilayers Sandwiched by an Ultrathin PtMn/Ta Layer

Field-free Spin-Orbit Torque-Induced Perpendicular Magnetization Switching in YIG/Ta/CoTb/Pt

Symmetry-dependent field-free switching of perpendicular magnetization

Field-free switching of magnetization induced by spin–orbit torque in Pt/CoGd/Pt thin film

Field-free magnetization switching through large out-of-plane spin–orbit torque in the ferromagnetic CoPt single layers

Spin-orbit Torque in Pt/CoNiCo/Pt Symmetric Devices

Field-Free Magnetization Switching Induced by Bulk Spin-Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Field-free Switching of Perpendicular Magnetization in a Noncollinear Antiferromagnetic Mn3Sn/[Pt/Co]4 Heterostructure

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Controllable Spin-Orbit Torque Induced by Interfacial Ion Absorption in Ta/CoFeB/MgO Multilayers with Canted Magnetizations

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Field-free switching of perpendicular magnetization in a noncollinear antiferromagnetic Mn 3 Sn/[Pt/Co] 4 heterostructure

Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy

Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin-orbit torque in ferromagnetic multilayers

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments