Abstract:Abstract Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. A potential alternative to STT is spin-orbit torque (SOT). However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications.

What problem does this paper attempt to address?

This paper aims to solve several key problems in magnetoresistive random - access memory (MRAM) technology, especially the need to achieve ultrafast magnetization switching in high - speed data storage and processing devices. Traditional MRAM relies on spin - transfer torque (STT), which limits its application range due to the existence of nanosecond - level incubation delays and related durability problems. These problems pose challenges to the development of high - speed data storage and processing devices. The paper proposes an alternative solution, that is, using spin - orbit torque (SOT) to achieve rapid magnetization switching without an external field. Specifically, the authors achieved SOT switching without an external field on the sub - nanosecond time scale in a CoFeB/Ti/CoFeB ferromagnetic sandwich structure while meeting the following three conditions: 1. **Switching without an external field**: Achieve magnetization switching without the assistance of an external magnetic field. 2. **Short incubation delay**: Reduce the incubation time during the switching process. 3. **Low switching current**: Use a lower current density to achieve magnetization switching. Through these improvements, the research team demonstrated the potential of this SOT - switching - without - an - external - field scheme for MRAM applications in terms of energy efficiency and scalability. Specifically, they found that in this sandwich structure, the spin current generated in the bottom magnetic layer or its interface has both in - plane and out - of - plane components. Among them, the in - plane component helps to reduce the incubation time, while the out - of - plane component enables switching without an external field at a low current. These results provide new ideas and technical paths for the development of high - performance, low - power SOT - based MRAM.

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