Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Zelalem Abebe Bekele,Yuan-Yuan Jiang,Kun Lei,Xiukai Lan,Xiangyu Liu,Hui Wen,Ding-Fu Shao,Kaiyou Wang

2024-04-20

Abstract:Spin-orbit torques (SOTs) generated through the conventional spin Hall effect and/or Rashba-Edelstein effect are promising for manipulating magnetization. However, this approach typically exhibits non-deterministic and inefficient behaviour when it comes to switching perpendicular ferromagnets. This limitation posed a challenge for write-in operations in high-density magnetic memory devices. Here, we determine an effective solution to overcome this challenge by simultaneously leveraging both a planar Hall effect (PHE) and an orbital Hall effect (OHE). Using a representative Co/PtGd/Mo trilayer SOT device, we demonstrate that the PHE of Co is enhanced by the interfacial coupling of Co/PtGd, giving rise to a finite out-of-plane damping-like torque within the Co layer. Simultaneously, the OHE in Mo layer induces a strong out-of-plane orbital current, significantly amplifying the in-plane damping-like torque through orbital-to-spin conversion. While either the PHE or OHE alone proves insufficient for reversing the perpendicular magnetization of Co, their collaborative action enables high-efficiency field-free deterministic switching. Our work provides a straightforward strategy to realize high-speed and low-power spintronics.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

This paper aims to address the issues of non-determinism and inefficiency in the process of vertical magnetization reversal. Specifically, traditional Spin Hall Effect (SHE) and Rashba-Edelstein Effect (REE) exhibit inefficiency and uncontrollability when manipulating vertical magnetization. This poses challenges for write operations in high-density magnetic storage devices. To solve this problem, researchers propose a new method that achieves efficient and deterministic field-free vertical magnetization reversal by simultaneously utilizing the Planar Hall Effect (PHE) and the Orbital Hall Effect (OHE).

The study used spin-orbit torque (SOT) devices with a Co/PtGd/Mo sandwich structure, demonstrating that the PHE of the Co layer is enhanced through coupling at the Co/PtGd interface, thereby generating a finite vertical damping-like torque. Meanwhile, the OHE in the Mo layer induces a strong vertical orbital current, which significantly amplifies the in-plane damping-like torque through orbital-to-spin conversion. Although PHE or OHE alone is insufficient to reverse the vertical magnetization of Co, their synergistic effect enables efficient field-free deterministic magnetization reversal. This approach provides a feasible strategy for constructing high-performance, low-power spintronic devices.