Field-Free Magnetization Switching in a Ferromagnetic Single Layer Through Multiple Inversion Asymmetry Engineering.

Qikun Huang,Chaoshuai Guan,Yibo Fan,Xiaonan Zhao,Xiang Han,Yanan Dong,Xuejie Xie,Tie Zhou,Lihui Bai,Yong Peng,Yufeng Tian,Shishen Yan

DOI: https://doi.org/10.1021/acsnano.2c03756

IF: 17.1

2022-01-01

ACS Nano

Abstract:A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.