Abstract:Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that has an out-of-plane component, which is crucial in switching perpendicular magnetization of adjacent ferromagnetic (FM) layer in the field-free condition. In this work, we analytically derive the threshold current of field-free perpendicular magnetization switching using the anomalous SOT. And we numerically calculate the track of the magnetic moment in a FM free layer when an applied current is smaller and greater than the threshold current. After that, we study the applied current dependence of the switching time and the switching energy consumption, which shows the minimum energy consumption decreases as out-of-plane torque proportion increases. Then we study the dependences of the threshold current on anisotropy strength, out-of-plane torque proportion, FM free layer thickness and Gilbert damping constant, and the threshold current shows negative correlation with the out-of-plane torque proportion and positive correlation with the other three parameters. Finally, we demonstrate that when the applied current is smaller than the threshold current, although it cannot switch the magnetization of FM free layer, it can still equivalently add an effective exchange bias field H_{bias} on the FM free layer. The H_{bias} is proportional to the applied current J_{SOT}, which facilitates the determination of the anomalous SOT efficiency. This work helps us to design new spintronic devices that favor field-free switching perpendicular magnetization using the anomalous SOT, and provides a way to adjust the exchange bias field, which is helpful in controlling FM layer magnetization depinning.

Experimental demonstration of voltage-gated spin-orbit torque switching in an antiferromagnet/ferromagnet structure

Field-Free Switching of Perpendicular Magnetization Through Voltage-Gated Spin-Orbit Torque

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Voltage-gated field-free spin–orbit torque switching in Pt/Co/Ir/MgO wedged structures

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Voltage-gated spin-orbit torque switching in IrMn-based perpendicular magnetic tunnel junctions

Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization.

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Current-induced Magnetization Switching in All-Oxide Heterostructures.

Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque

Large Voltage Control of Magnetic Anisotropy in CoFeB/MgO/OX Structures at Room Temperature

Strain-mediated spin-orbit torque switching for magnetic memory

Magnetization Switching by Magnon-Mediated Spin Torque Through an Antiferromagnetic Insulator.

Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin-orbit torque in ferromagnetic multilayers

Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque