Abstract:This study emphasizes deterministic current‐induced spin‐orbit torque magnetization switching in CoFeB‐based systems with perpendicular magnetic anisotropy, achieving an impressive switching ratio nearing 100% without the need for a collinear in‐plane field. The integration of NiO as an antiferromagnetic insulator is vital for generating the out‐of‐plane spin polarization component σz, opening up exciting prospects for advancements in spintronics and innovative technologies. In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Experimental demonstration of voltage-gated spin-orbit torque switching in an antiferromagnet/ferromagnet structure

Voltage-gated field-free spin–orbit torque switching in Pt/Co/Ir/MgO wedged structures

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

In-Plane Current-Driven Spin-Orbit Torque Switching in Perpendicularly Magnetized Films with Enhanced Thermal Tolerance

Current-induced magnetization switching using electrically-insulating spin-torque generator

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Deterministic and non-volatile switching of all-van der Waals spin-orbit torque system above room temperature without external magnetic fields

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Large Voltage Control of Magnetic Anisotropy in CoFeB/MgO/OX Structures at Room Temperature

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Nanosecond Magneto‐Ionic Control of Magnetism Using a Resistive Switching HfO2 Gate Oxide

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Oscillatory spin-orbit torque switching induced by field-like torques

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Spin-orbit Torques in Perpendicularly Magnetized Ir22Mn78/Co20Fe60B20/MgO Multilayer

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Field-free switching of magnetization induced by spin–orbit torque in Pt/CoGd/Pt thin film

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer