Electrical Control of Co/Ni Magnetism Adjacent to Gate Oxides with Low Oxygen Ion Mobility

Y. N. Yan,X. J. Zhou,F. Li,B. Cui,Y. Y. Wang,G. Y. Wang,F. Pan,C. Song

DOI: https://doi.org/10.1063/1.4931752

IF: 4

2015-01-01

Applied Physics Letters

Abstract:We investigate the electrical manipulation of Co/Ni magnetization through a combination of ionic liquid and oxide gating, where HfO2 with a low O2− ion mobility is employed. A limited oxidation-reduction process at the metal/HfO2 interface can be induced by large electric field, which can greatly affect the saturated magnetization and Curie temperature of Co/Ni bilayer. Besides the oxidation/reduction process, first-principles calculations show that the variation of d electrons is also responsible for the magnetization variation. Our work discloses the role of gate oxides with a relatively low O2− ion mobility in electrical control of magnetism, and might pave the way for the magneto-ionic memory with low power consumption and high endurance performance.