Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage

Xue Ren,Liang Liu,Bin Cui,Bin Cheng,Weikang Liu,Taiyu An,Ruiyue Chu,Mingfang Zhang,Tingting Miao,Xiangxiang Zhao,Guangjun Zhou,Jifan Hu
DOI: https://doi.org/10.1021/acs.nanolett.3c00869
IF: 10.8
2023-06-23
Nano Letters
Abstract:Electrical control of magnetic properties is crucial for low-energy memory and logic spintronic devices. We find that the magnetic properties of ferrimagnetic CoGd can be altered through ionic liquid gating. Gate voltages manipulate the opposite magnetic moments in Co and Gd sublattices and induce a giant magnetic compensation temperature change of more than 200 K in Pt/CoGd/Pt heterostructures. The electrically controlled dominant magnetic sublattice allows voltage-induced magnetization...
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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