Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe 5 GeTe 2
Cheng Tan,Wen-Qiang Xie,Guolin Zheng,Nuriyah Aloufi,Sultan Albarakati,Meri Algarni,Junbo Li,James Partridge,Dimitrie Culcer,Xiaolin Wang,Jia Bao Yi,Mingliang Tian,Yimin Xiong,Yu-Jun Zhao,Lan Wang
DOI: https://doi.org/10.1021/acs.nanolett.1c01108
IF: 10.8
2021-06-21
Nano Letters
Abstract:Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe<sub>5</sub>GeTe<sub>2</sub> (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 10<sup>21</sup> cm<sup>–3</sup> has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c01108?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01108</a>.Methods, magnetic measurements, detailed hysteresis behaviors of 113 and 6.8 nm F5GT devices, protonic gating modulation of other 3 devices at 2 K, angle-dependent anomalous Hall measurement of 6.8 and 17 nm devices, basic properties of F5GT calculated by density functional theory with various functionals, density functional theory calculations of <i>ΔE</i> based on thickness of F5GT, Hartree–Fock band structures without SOC and corresponding Hall conductivity, calculated interlayer and intralayer magnetic couplings of F5GT, charge density difference of electron doping F5GT, coercivity in few-layer F5GT and FGT, and decrease of coercivity with the increase of thickness in FGT and F5GT nanoflakes (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c01108/suppl_file/nl1c01108_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology