Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Gate-tunable High Magnetoresistance in Monolayer Fe3GeTe2 Spin Valves.

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable asymmetric magnetoresistance in an Fe 3 GeTe 2 /graphite/Fe 3 GeTe 2 lateral spin valve

Gate‐tunable Spin Valve Effect in Fe3GeTe2‐based Van Der Waals Heterostructures

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 Van Der Waals Heterostructures.

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces

Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures

Gate-controlled Magnetic Transitions in Fe 3 GeTe 2 with Lithium Ion Conducting Glass Substrate

Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization

Giant Magnetoresistance And Tunnel Magnetoresistance Effects In Fecogd-Based Spin Valves And Magnetic Tunnel Junctions

Room-Temperature and Tunable Tunneling Magnetoresistance in Fe<sub>3</sub>GaTe<sub>2</sub>-Based 2D van der Waals Heterojunctions

Half-metallic transport and spin-polarized tunneling through the van der Waals ferromagnet Fe${_4}$GeTe$_{2}$

A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe5 GeTe2 /Graphene Heterostructure

Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

Self-Modulated Magnetism in Two-Dimensional Ferromagnet Fe 3 GeTe 2 Induced by Ambient Effects

Manipulating Ferromagnetism in Few‐Layered Cr2Ge2Te6