Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Spin Response in Organic Spin Valves Based on La2/3sr1/3mno3 Electrodes

Organic Spin-Valves: Physics and Applications

Recent advances in organic spin-valve devices

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Distinguishing Between Tunneling and Injection Regimes of Ferromagnet/Organic Semiconductor/Ferromagnet Junctions

Room-temperature Spin Valve Effects in La0.67Sr0.33MnO3/Alq3/Co Devices

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Giant Magnetoresistance Enhancement at Room-Temperature in Organic Spin Valves Based on La0.67Sr0.33MnO3 Electrodes

Negative Spin Valve effects in manganite/organic based devices

Achieving Large and Nonvolatile Tunable Magnetoresistance in Organic Spin Valves Using Electronic Phase Separated Manganites.

Giant magnetoresistance in organic spin-valves

Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions

Room-temperature Spin-Valve Devices Based on Fe3GaTe2/MoS2/Fe3GaTe2 2D Van Der Waals Heterojunctions.

Large and Tunable Magnetoresistance in Cr1−xTe/Al2O3/Cr1−xTe Vertical Spin Valve Device

The Basis of Organic Spintronics: Fabrication of Organic Spin Valves

Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices

Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers