Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Spin Response in Organic Spin Valves Based on La2/3sr1/3mno3 Electrodes

Spin-dependent Transport Behavior in C60 and Alq3 Based Spin Valves with a Magnetite Electrode (Invited)

Spin Transport in $\hbox{co/al}_{2}\hbox{o}_{3}/\hbox{alq}_{3}/\hbox{co}$ Organic Spin Valve

Organic Spin-Valves: Physics and Applications

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Dependent Transport and Magnetic Properties in Fe4N/tris(8-hydroxyquinoline) Aluminum/co Organic Spin Valves Fabricated by Facing-Target Sputtering

Recent advances in organic spin-valve devices

Room-temperature Spin Valve Effects in La0.67Sr0.33MnO3/Alq3/Co Devices

Giant Magnetoresistance Enhancement at Room-Temperature in Organic Spin Valves Based on La0.67Sr0.33MnO3 Electrodes

Organic-inorganic Hybrid Spin Valves with Different Organic Spacers

Positive Giant Magnetoresistance in La 0.67 Sr 0.33 MnO 3 /alq 3 /co Organic Spin-Valves

Negative Spin Valve effects in manganite/organic based devices

Achieving Large and Nonvolatile Tunable Magnetoresistance in Organic Spin Valves Using Electronic Phase Separated Manganites.

Giant Magnetoresistance In La0.67ca0.33mno3/Alq(3)/Co Sandwiched-Structure Organic Spin Values

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Magnetoresistance Effect in Rubrene-Based Spin Valves at Room Temperature

Room Temperature Magnetoresistance in an Organic Spin Valve with an Aromatic Hydrocarbon Macrocycle

Giant Magnetoresistance in La <sub>0.67</sub> Ca <sub>0.33</sub> MnO <sub>3</sub> /Alq <sub>3</sub> /Co Sandwiched-Structure Organic Spin Valves

Interfacial Effects on the Microstructures and Magnetoresistance of Ni80Fe20/P3HT/Fe Organic Spin Valves