Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Room-temperature Spin Valve Effects in La0.67Sr0.33MnO3/Alq3/Co Devices

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Spin Response in Organic Spin Valves Based on La2/3sr1/3mno3 Electrodes

Recent advances in organic spin-valve devices

Giant Magnetoresistance Enhancement at Room-Temperature in Organic Spin Valves Based on La0.67Sr0.33MnO3 Electrodes

Organic Spin-Valves: Physics and Applications

Negative Spin Valve effects in manganite/organic based devices

The Basis of Organic Spintronics: Fabrication of Organic Spin Valves

Spin filtering of a termination-controlled LSMO/Alq3 heterojunction for an organic spin valve

Strong Asymmetrical Bias Dependence of Magnetoresistance in Organic Spin Valves: the Role of Ferromagnetic/organic Interfaces

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Achieving Large and Nonvolatile Tunable Magnetoresistance in Organic Spin Valves Using Electronic Phase Separated Manganites.

Manipulating Spin Injection into Organic Materials Through Interface Engineering

Effect of substrate temperature on the spin transport property in C60-based spin valve devices

FABRICATION OF LATERAL ORGANIC SPIN VALVES BASED ON La0.7Sr0.3MnO3 ELECTRODES

Role of the Magnetic Anisotropy in Organic Spin Valves

Voltage Polarity Manipulation of the Magnetoresistance Sign in Organic Spin Valve Devices

Termination Effect of LSMO on Interfacial Electronic and Magnetic Properties in Alq3-Based Organic Spintronics

Organic Semiconductors for Room-Temperature Spin Valves

Interfacial Effects on the Microstructures and Magnetoresistance of Ni80Fe20/P3HT/Fe Organic Spin Valves