Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Recent advances in organic spin-valve devices

Organic Spin Valves: the First Organic Spintronics Devices

Organic Spin-Valves: Physics and Applications

Spin Response in Organic Spin Valves Based on La2/3sr1/3mno3 Electrodes

Isotope Effect in Spin Response of Π-Conjugated Polymer Films and Devices

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Hyperfine Interaction in Spin Response of Organic Devices

Cornerstone of molecular spintronics: Strategies for reliable organic spin valves

The Basis of Organic Spintronics: Fabrication of Organic Spin Valves

Giant magnetoresistance in organic spin-valves

Organic Semiconductors for Room-Temperature Spin Valves

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

A New Twist on Organic Spintronics; Controlling Transport in Organic Sandwich Devices Using Fringe Fields from Ferromagnetic Films

Achieving Significant Multilevel Modulation in Superior‐quality Organic Spin Valve

Organic Spin-Valves Based on Fullerene C60

Angular dependent magnetoresistance in organic spin valves

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Voltage Polarity Manipulation of the Magnetoresistance Sign in Organic Spin Valve Devices

A brief review of ferroelectric control of magnetoresistance in organic spin valves

Active control of magnetoresistance of organic spin valves using ferroelectricity

Spin and magnetic field effects in organic semiconductor devices