Abstract:This study focuses on the captivating interplay between the ferromagnetic Fe3GeTe2 and the piezoelectric α‐In2Se3, both 2D van der Waals (vdW) materials. Strained heterojunctions exhibit several compelling transformations: increased domain density, reduced Curie temperature, and emergent magnetostrictive ferromagnetic domains. Using α‐In2Se3 is a versatile approach to strain‐tune vdW materials, including graphite and Te based vdW chalcogenides. The van der Waals interaction enables atomically thin layers of exfoliated 2D materials to be interfaced in heterostructures with relaxed epitaxy conditions, however, the ability to exfoliate and freely stack layers without any strain or structural modification is by no means ubiquitous. In this work, the piezoelectricity of the exfoliated van der Waals piezoelectric α‐In2Se3 is utilized to modify the magnetic properties of exfoliated Fe3GeTe2, a van der Waals ferromagnet, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a comparison to a graphite/α‐In2Se3 heterostructure, for which a decrease in the Tuinstra‐Koenig ratio is found. Magnetostrictive ferromagnetic domains are also observed, which may contribute to the enhanced magnetic coercivity. Density functional theory calculations and atomistic spin dynamic simulations show that the Fe3GeTe2 layer is compressively strained by 0.4%, reducing the exchange stiffness and magnetic anisotropy. The incorporation of α‐In2Se3 may be a general strategy to electrostatically strain interfaces within the paradigm of hexagonal boron nitride‐encapsulated heterostructures, for which the atomic flatness is both an intrinsic property and paramount requirement for 2D van der Waals heterojunctions.

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Giant and Nonvolatile Control of Exchange Bias in Fe<sub>3</sub>GeTe<sub>2</sub>/Irradiated Fe<sub>3</sub>GeTe<sub>2</sub>/MgO Heterostructure Through Ultralow Voltage

Giant and Nonvolatile Control of Exchange Bias in Fe3GeTe2/Irradiated Fe3GeTe2/MgO Heterostructure Through Ultralow Voltage

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Strong Non-Volatile Voltage Control Of Magnetism In Magnetic/Antiferroelectric Magnetoelectric Heterostructures

Electric-field control of magnetism in few-layered van der Waals magnet

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

The Electronic and Magnetic Properties Modulated by Ferroelectric Polarization Switching in Two-Dimensional VSeTe/Sc2CO2 Van Der Waals Heterostructures.

Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2.

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe<sub>5</sub>GeTe<sub>2</sub>

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Tunable Magnetoelectric Coupling and Electrical Features in an Ultrathin Cr2Si2Te6/In2Se3 Heterostructure.

Selectively Controlled Ferromagnets by Electric Fields in Van Der Waals Ferromagnetic Heterojunctions

Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction

Gate‐Tunable Exchange Bias and Volage‐Controlled Magnetization Switching in a van der Waals Ferromagnet

Electronic Structure, Curie Temperature, and Magnetic Transport of a Two-Dimensional Multiferroic MnSe2/In2Se3 Heterostructure

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet