Abstract:Ferroelectric control of polarity of the spin‐polarized current can be achieved in van der Waals multiferroic heterostructures via reversible FE switch of the internal electric field and the FE control of the interfacial effect. This opens up new opportunities for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as multiferroic spin field‐effect transistors. Ferroelectric (FE) control of magnetism at nanoscale, for instance, FE control of the polarity of spin‐polarized current is crucial for technological advances in magnetoelectric and spintronic applications. However, this fascinating functionality has not been reported in nanoscale systems yet. Herein, a new class of FE/A‐type antiferromagnetic heterobilayer/FE van der Waals (vdW) multiferroic structures is found, in which the FE control of polarity of spin‐polarized current is found possible. Take Sc2CO2/CrSiTe3/CrGeTe3/Sc2CO2 heterostructure as a successful example. First‐principles calculations reveal that its polarity of half‐metallicity can be switched by flipping the FE polarization orientation. Meanwhile, device transport simulation shows that its up/down spin current transmission ratio is as large as 0.1 × 103 at P→↑↑ Sc2CO2 configuration and is only 2.6 × 10−3 at P→↓↓ Sc2CO2 configuration in the vdW multiferroic heterostructures. Essentially, it stems from the reversible FE switch of the internal electric field across the CrSiTe3/CrGeTe3 heterobilayer and the FE control of the interfacial effect between Sc2CO2 and Cr(Si/Ge)Te3 layers. This work opens a direction for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as spin field‐effect transistors.

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Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

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Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

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Ferroelectric control of magnetic coupling of monolayer MnBr 2 in semiconducting multiferroic van der Waals heterostructure

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2D CrMoC2S6/Sc2CO2 multiferroic heterostructure with robust antiferromagnetic ordering, switchable electronic properties and magnetic anisotropy

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Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

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Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures

The Effect of Switchable Electronic Polarization States on the Electronic Properties of Two-dimensional Multiferroic TMBr2/Ga2SSe2 (TM=V-Ni) Heterostructures

Ferroelectricity-Driven Metallicity and Magnetic Skyrmions in van der Waals Cr2Ge2Te6/Hf2Ge2Te6 Multiferroic Heterostructure

Tunable Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction in an Ultrathin van der Waals Fe3GeTe2/In2Se3 Heterostructure

Ferroelectric control of the semiconductor-metal transition in two-dimensional / ( = , ) van der Waals heterostructures and application to nonvolatile memory devices

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor