Ferroelectricity-Driven Metallicity and Magnetic Skyrmions in van der Waals Cr2Ge2Te6/Hf2Ge2Te6 Multiferroic Heterostructure

Zheng Chen,Hongliang Hu,Wenjun Zhang,Xiaoping Wu,Ping Li,Changsheng Song

2024-10-12

Abstract:Two-dimensional (2D) multiferroic heterostructures present a promising platform for advanced spin devices by leveraging the coexisting ferromagnetic (FM) and ferroelectric (FE) orders. Through first-principles calculations and micromagnetic simulations, we reveal non-volatile control of metallicity and topological spin textures in the Cr2Ge2Te6/Hf2Ge2Te6(CGT/HGT) heterostructure. Notably, manipulating ferroelectric polarization in HGT significantly modulates the magnetic anisotropy energy (MAE) and Dzyaloshinskii-Moriya interaction (DMI) of CGT/HGT, reversing the easy magnetization axis from in-plane to out-of-plane. By analyzing the atomic-resolved SOC energy (\Delta Esoc), it is found that the cause of the change comes from the Fert-Levy mechanism. Additionally, this polarization control enables the creation and annihilation of bimerons and skyrmions, with interlayer sliding further altering magnetic ordering. Our findings offer valuable insights into magnetoelectric coupling and spin texture manipulation in 2D magnets, highlighting their potential for next-generation spintronic and memory devices.

Materials Science,Computational Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore methods for non - volatile control of electrons, magnetism and topological spin textures by studying the ferroelectric - driven metallization and magnetic skyrmion phenomena in two - dimensional multiferroic heterojunctions. Specifically, the paper focuses on the Cr₂Ge₂Te₆/Hf₂Ge₂Te₆ (CGT/HGT) multiferroic heterojunction system and reveals the following aspects through first - principles calculations and atomic simulations:

1. **Effect of ferroelectric polarization on metallization**:
- The paper shows that the reversal of ferroelectric polarization in the HGT layer can induce a transition from semiconductor to metallic behavior. When the ferroelectric polarization direction in the HGT layer is upward, the CGT/HGT heterojunction exhibits metallic properties; when the polarization direction is downward, the system transforms into a semiconductor nature.

2. **Effect of ferroelectric polarization on magnetic anisotropy energy (MAE) and Dzyaloshinskii - Moriya interaction (DMI)**:
- Research indicates that the manipulation of ferroelectric polarization in the HGT layer significantly modulates the magnetic anisotropy energy and DMI of the CGT/HGT system. This causes the easy axis of magnetization to shift from in - plane to out - of - plane. By analyzing the atom - resolved spin - orbit coupling energy (ΔE_soc), it is found that this change is mainly attributed to the Fert - Levy mechanism.

3. **Effect of ferroelectric polarization on the creation and annihilation of topological spin textures (such as double - domain walls and skyrmions)**:
- By manipulating ferroelectric polarization, the creation and annihilation of double - domain walls and skyrmions can be achieved in the CGT/HGT heterojunction. In addition, inter - layer sliding further changes the magnetic order, which provides potential application prospects for future spintronics and storage devices.

4. **Effect of inter - layer sliding on magnetic order**:
- The research also explores the reversible control effect of inter - layer sliding on magnetic order in different stacking configurations, demonstrating that topological spin textures can be effectively manipulated through ferroelectric polarization reversal and inter - layer sliding.

Overall, through detailed theoretical calculations and simulations, this paper reveals the non - volatile control mechanism of ferroelectric polarization on electrons, magnetism and topological spin textures in multiferroic heterojunctions, providing an important theoretical basis and experimental guidance for the development of next - generation spintronics and storage devices.