Switching intrinsic magnetic skyrmions with controllable magnetic anisotropy in van der Waals multiferroic heterostructures

Ze-quan Wang,Feng Xue,Liang Qiu,Zhe Wang,Ruqian Wu,Yusheng Hou

DOI: https://doi.org/10.1021/acs.nanolett.3c05024

2024-03-09

Abstract:Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic states can be achieved in two-dimensional van der Waals (vdW) multiferroic heterostructure CrSeI/In2Te3 by reversing the ferroelectric polarization of In2Te3. The core mechanism of this switching is traced to the controllable magnetic anisotropy of CrSeI influenced by the ferroelectric polarization of In2Te3. We propose a useful descriptor linking the presence of magnetic skyrmions to magnetic parameters, and validate this connection through studies of a variety of similar vdW multiferroic heterostructures. Our work demonstrates that manipulating magnetic skyrmions via tunable magnetic anisotropies in vdW multiferroic heterostructures represents a highly promising and energy-efficient strategy for future development of spintronics.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to efficiently create and eliminate magnetic skyrmions in two - dimensional van der Waals multiferroic heterostructures. Specifically, through first - principles calculations, the researchers found that by reversing the polarization direction of the ferroelectric material In2Te3, the transition between the intrinsic magnetic skyrmions and the high - temperature ferromagnetic state can be achieved in the CrSeI/In2Te3 heterostructure. The core mechanism of this transition lies in the influence of ferroelectric polarization on the controllable magnetic anisotropy of CrSeI. The study also proposed a useful descriptor, which links the existence of magnetic skyrmions to magnetic parameters, and verified this link by studying a variety of similar van der Waals multiferroic heterostructures. This work shows that manipulating magnetic skyrmions by regulating the tunable magnetic anisotropy in van der Waals multiferroic heterostructures is an efficient and energy - saving strategy, which is of great significance for the future development of spintronics.

### Formula presentation
The formulas involved in the paper include:
1. **Spin Hamiltonian**:
\[
H = \sum_{\langle i,j \rangle} J_1 \mathbf{S}_i \cdot \mathbf{S}_j + \sum_{\langle\langle i,j \rangle\rangle} J_2 \mathbf{S}_i \cdot \mathbf{S}_j + \sum_{\langle\langle\langle i,j \rangle\rangle\rangle} J_3 \mathbf{S}_i \cdot \mathbf{S}_j + \sum_{\langle i,j \rangle} \mathbf{D}_{ij} \cdot (\mathbf{S}_i \times \mathbf{S}_j) - K \sum_i (S_i^z)^2
\]
where \(\mathbf{S}_i\) is the spin of the \(i\)-th Cr atom, \(J_1\), \(J_2\), \(J_3\) are the Heisenberg exchange parameters of the nearest neighbor, the next - nearest neighbor and the third - nearest neighbor respectively, \(\mathbf{D}_{ij}\) is the DMI vector of the nearest neighbor, and \(K\) is the single - ion anisotropy parameter.

2. **Topological charge**:
\[
Q = \frac{1}{4\pi} \int dxdy \left( \frac{\partial \mathbf{m}}{\partial x} \cdot \left( \mathbf{m} \times \frac{\partial \mathbf{m}}{\partial y} \right) \right)
\]
where \(\mathbf{m}\) is the normalized magnetization vector, and \(x\) and \(y\) are the planar coordinates.

3. **Exchange stiffness \(A\)**:
\[
A = \frac{1}{2} \sum_{\langle i,j \rangle} J_{ij} a_{ij}
\]
where \(a_{ij}\) is the distance between the \(i\)-th and \(j\)-th Cr atoms.

4. **DMI coefficient \(d\)**:
\[
d = \frac{1}{2n} \sum_{\langle i,j \rangle} D_{ij} a
\]
where \(n\) is the number of magnetic atoms in the unit cell, and \(a\) is the coordination number of the nearest - neighbor Cr - Cr pairs.

5. **Effective out - of - plane magnetic anisotropy \(K_{\text{eff}}\)**:
\[
K_{\text{eff}} = \frac{n K}{V_0}
\]
where \(V_0\) is the volume of the unit cell, \(n\) is the number of magnetic atoms in the unit cell, and \(K\) is the single - ion anisotropy parameter.

6. **Description**