Abstract:Two-dimensional (2D) multiferroic materials are recognized as promising candidates for next-generation nanodevices due to their tunable magnetoelectric coupling and distinctive physical phenomena. In this study, we proposed a novel 2D multiferroic van der Waals heterostructure (vdWH) by stacking atomic layers of ferroelectric In 2 Se 3 and ferromagnetic MnI 3 . Using first-principles calculations, we found that the MnI 3 /In 2 Se 3 vdWH exhibit robust metallic conductivity across various spin and polarization states, preserving the distinctive band characteristics of isolated In 2 Se 3 and MnI 3 . However, the alignment of Fermi levels causes the conduction band minimum (CBM) and valence band maximum (VBM) of In 2 Se 3 and MnI 3 to shift relative to their original band structures. Remarkably, the MnI 3 /In 2 Se 3 with the upward polarization state of In 2 Se 3 exhibits an Ohmic contact. Switching the polarization direction of In 2 Se 3 from upward to downward can transform the MnI 3 /In 2 Se 3 vdWH from an Ohmic contact to a p-type Schottky contact, while also modifying its dipole moment, magnetic strength and direction. Based on these properties of MnI 3 /In 2 Se 3 vdWH, we designed the field-effect transistors (FETs) with high on/off rates and nonvolatile data storage device. Furthermore, the Schottky barrier heights (SBHs), magnetic moment, and dipole moment of MnI 3 /In 2 Se 3 vdWH can also be effectively regulated by reducing the interlayer distance. With the continuous reduction of the interlayer distance of MnI 3 /In 2 Se 3 vdWH, its easy magnetization axis is expected to shift from in-plane to out-of-plane. These findings offer new insights for the design and development of the next-generation spintronic and nonvolatile memory nanodevices.

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