Abstract:The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic semiconductors owing to the lack of intrinsic single-phase multiferroic materials in nature. In this study, we propose a VN2H2/Al2O3 van der Waals magnetoelectric multiferroic heterostructure and investigate its electronic, magnetic, and transport properties using density functional theory combined with the Boltzmann transport theory. The VN2H2 monolayer is a room-temperature ferromagnetic semiconductor with a band gap of 0.24 eV and a Curie temperature of 411 K, while the Al2O3 monolayer is a ferroelectric semiconductor with a polarization value of 0.11 C m-2. In the VN2H2/Al2O3 van der Waals heterostructures, the conversion between the metal and the semiconductor can be controlled by altering the polarization of the Al2O3 layer. The VN2H2/Al2O3 van der Waals heterostructure retains room-temperature ferromagnetism, and the reverse of polarization is accompanied with a change in the direction of the easy magnetization axis. In addition, electrostatic doping can significantly improve the conductivity of the downward polarization state and transform the upward polarization state from a metal to a half-metal, achieving 100% spin polarization. Our results thus pave the way for achieving highly tunable electromagnetic and transport properties in van der Waals magnetoelectric heterostructures, which have potential applications in next-generation low-power logic and memory devices.

Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Ferrielectricity controlled widely-tunable magnetoelectric coupling in van der Waals multiferroics

Layer-Selective Non-Reciprocal Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Artificial Multiferroics and Enhanced Magnetoelectric Effect in van der Waals Heterostructures

Hole doped nonvolatile and electrically controllable magnetism in van der Waals ferroelectric heterostructures

Ferroelectric control of magnetic coupling of monolayer MnBr 2 in semiconducting multiferroic van der Waals heterostructure

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Interfacial Charge-Mediated Non-Volatile Magnetoelectric Coupling in Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 Multiferroic Heterostructures

Interlayer-spin-interaction-driven Sliding Ferroelectricity in a van der Waals Magnetic Heterobilayer

Nonvolatile magnetoelectric coupling in two-dimensional ferromagnetic-bilayer/ferroelectric van der Waals heterostructures

Ferroelectrically controlled electromagnetic and transport properties of VN2H2/Al2O3 van der Waals multiferroic heterostructures

Nonvolatile electric field control of magnetism in bilayer CrI 3 on monolayer In 2 Se 3

Consequences of magneto-electrical coupling in multiferroic VSe$_{2}$$/$Sc$_{2}$CO$_{2}$ heterostructures

Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism

Nonvolatile Electrical Control and Reversible Gas Capture by Ferroelectric Polarization Switching in 2D FeI2/In2S3 van der Waals Heterostructures

Toward Room-Temperature Electrical Control of Magnetic Order in Multiferroic van der Waals Materials