Layer-Selective Non-Reciprocal Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Yangliu Wu,Deju Zhang,Yanning Zhang,Longjiang Deng,Bo Peng

2023-10-17

Abstract:Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) {\alpha}-In2Se3. We demonstrate anomalously layer-selective nonreciprocal and nonvolatile electric-field control of magnetization by the ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of {\alpha}-In2Se3, which favor to selectively switch the spins in the second layer. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of few atomic layers for multi-stage magnetic memories and brain inspired in-memory computing.

Materials Science

What problem does this paper attempt to address?

The paper attempts to address the problem of controlling magnetism through a pure electric field rather than a magnetic field, specifically in achieving this goal in 2D van der Waals heterostructure multiferroic materials. Specifically, the researchers constructed a van der Waals heterostructure multiferroic material composed of atomically thin layers of antiferromagnetic (AFM) CrI₃ and ferroelectric (FE) α-In₂Se₃, and demonstrated that this material can achieve layer-selective, non-reciprocal, and non-volatile electric field control of magnetization under different ferroelectric polarization directions.

### Main Issues and Challenges:
1. **Scarcity of Single-Phase Multiferroic Materials**: Single-phase multiferroic materials are very rare due to the intrinsic repulsion between magnetism and polarization, and the magnetoelectric coupling is usually weak.
2. **Challenge of Reversible Non-Volatile Magnetization Rotation**: While there have been some reports on controlling magnetization through indirect strain-mediated coupling in multiferroic heterostructure thin films, reversible non-volatile magnetization rotation remains a significant challenge.
3. **Need for Low-Power and Non-Volatile Spintronic Devices**: Controlling magnetism through a pure electric field rather than a magnetic field is of great significance for the next generation of low-power spintronic and memory devices.

### Research Methods and Results:
- **Material Construction**: The researchers constructed a van der Waals heterostructure multiferroic material composed of six layers of CrI₃ and α-In₂Se₃.
- **Magnetic Characterization**: The magnetization behavior under an applied magnetic field was measured using reflection magnetic circular dichroism (RMCD) microscopy.
- **Electric Field Control**: By applying different gate voltages, the effect of ferroelectric polarization on magnetization was studied, and it was found that ferroelectric polarization can significantly enhance interlayer ferromagnetic coupling, thereby achieving layer-selective magnetization reversal.
- **Non-Reciprocity and Non-Volatility**: The study found that different directions of ferroelectric polarization lead to non-reciprocal magnetoelectric coupling effects, and the magnetization state remains after the electric field is removed, showing non-volatility.

### Significance and Application Prospects:
- **Low-Power Spintronic Devices**: This research provides a new approach for achieving low-power, non-volatile spintronic devices.
- **Multistate Storage and Neuromorphic Computing**: The multistate magnetization characteristics of this material offer possibilities for multistate storage and neuromorphic computing.
- **Fundamental Physical Phenomena**: The study reveals unique physical phenomena at the 2D AFM/FE interface, providing important insights for understanding the microscopic mechanisms of multiferroic materials.

In summary, through experiments and theoretical calculations, this paper demonstrates a new method for achieving layer-selective, non-reciprocal, and non-volatile electric field control of magnetization in 2D van der Waals heterostructure multiferroic materials, paving the way for the development of future low-power spintronic devices.