Room-temperature Ferroelectric Control of 2D Layered Magnetism

Yingying Wu,Zdenek Sofer,Wei Wang

2024-09-13

Abstract:Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric coupling, especially in layered ferroelectric/ferromagnet heterostructures. A key challenge is achieving reversible and stable switching between distinct magnetic states using a voltage control. In this work, we present ferroelectric tuning of room-temperature magnetism in a 2D layered ferromagnet. The energy-efficient control consumes less than 1 fJ per operation which is normally in the order of several aJ, resulting in a ~43% change in magnetization. This tunable multiferroic interface and associated devices provide promising opportunities for next-generation reconfigurable communication systems, spintronics, sensors and memories.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to control the magnetism of two - dimensional layered magnets through electric fields in order to develop fast, compact and ultra - low - power electronic devices. Specifically, the research focuses on achieving the regulation of the magnetism of two - dimensional layered ferromagnets by ferroelectrics at room temperature.

### Specific description of the problem:

1. **Energy efficiency and stability**:
- Current traditional methods based on magnetic fields and currents have high energy consumption when controlling magnetic and spin states, while using electric fields can significantly reduce energy consumption.
- The goal of the research is to achieve reversible and stable magnetic - state switching with extremely low operating energy consumption (less than 1 fJ per operation), thus making it possible for future low - power electronic devices.

2. **Material selection and performance optimization**:
- It is necessary to find ferroelectric and ferromagnetic materials that can work stably at room temperature to ensure the feasibility in practical applications.
- Fe₃GaTe₂ (FGaT) is selected as the ferromagnetic material because it has a Curie temperature as high as 380 K and strong perpendicular magnetic anisotropy.
- CuInP₂S₆ (CIPS) is selected as the ferroelectric material because it has ferroelectricity below 320 K and a large bandgap (2.62 eV).

3. **Heterostructure design**:
- A heterostructure containing a ferroelectric layer and a ferromagnetic layer is designed and fabricated, and the electric - field regulation is achieved through graphene as a metal contact layer.
- The anomalous Hall effect (AHE) under different temperature and gate - voltage conditions is studied to evaluate the change in magnetization.

4. **Experimental verification**:
- The experimental results show that in a 20 - nm - thick FGaT sample, a magnetization change of about 43% is achieved through ferroelectric regulation.
- This regulation mechanism not only affects the surface layer but may also affect the magnetization characteristics at a deeper level, thus explaining the exchange - bias phenomenon.

### Main contributions:

- Efficient regulation of the magnetism of two - dimensional layered magnets by ferroelectrics at room temperature is achieved.
- A new approach to develop low - power, high - performance spintronic devices is provided.
- Potential opportunities for future applications in fields such as reconfigurable communication systems, spintronics, sensors and memories are provided.

Through these efforts, the research lays the foundation for the development of next - generation ultra - compact, ultra - low - power spintronic devices.