Abstract:Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

Ferroelectric Control of Electron Half-Metallicity in A-type Antiferromagnets and Its Application to Nonvolatile Memory Devices

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Electronic and Transport Engineering of A-Type Antiferromagnets with Ferroelectric Sandwich Structure: Toward Multistate Nonvolatile Memory Applications

Ferroelectric control of the semiconductor-metal transition in two-dimensional / ( = , ) van der Waals heterostructures and application to nonvolatile memory devices

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in Van Der Waals Heterostructure Multiferroics

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Ferromagnetic and Ferroelectric Two-Dimensional Materials for Memory Application

Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

Layer-Selective Non-Reciprocal Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

The Electronic and Magnetic Properties Modulated by Ferroelectric Polarization Switching in Two-Dimensional VSeTe/Sc2CO2 Van Der Waals Heterostructures.

Hole doped nonvolatile and electrically controllable magnetism in van der Waals ferroelectric heterostructures

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor Α-In2se3 for Nonvolatile Memory

Nonvolatile Electrical Control and Reversible Gas Capture by Ferroelectric Polarization Switching in 2D FeI2/In2S3 van der Waals Heterostructures

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)