Nonvolatile Electric Field Control of Magnetism in Bilayer CrI3 on Monolayer In2Se3

Hai-Xia Cheng,Jun Zhou,Cong Wang,Wei Ji,Yan-Ning Zhang
DOI: https://doi.org/10.1103/physrevb.104.064443
2021-01-01
Abstract:Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Here, via first-principles calculations, we propose a van der Waals (vdW) multiferroic heterostructure composed of a magnetic ${\mathrm{CrI}}_{3}$ bilayer and a ferroelectric \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ monolayer substrate. Interestingly, the interlayer magnetism of bilayer ${\mathrm{CrI}}_{3}$ is switchable between the ferromagnetic and antiferromagnetic coupling by nonvolatile control of the ferroelectric polarization direction of \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$. The interlayer magnetic coupling of ${\mathrm{CrI}}_{3}$ bilayer originates from the direct interaction of adjacent I atoms between ${\mathrm{CrI}}_{3}$ monolayers, which can be tuned by the polarization of ${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$, explaining the electrical control of interlayer magnetic phase transition. Our work demonstrates a multiferroelectric material platform by artificially stacking two dimensional vdW layers, providing an effective method for achieving nonvolatile electrical control of atomic-thin vdW ferromagnets.
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