Controlling magnetism in 2D CrI 3 by electrostatic doping

Shengwei Jiang,Lizhong Li,Zefang Wang,Kin Fai Mak,Jie Shan

DOI: https://doi.org/10.1038/s41565-018-0135-x

IF: 38.3

2018-01-01

Nature Nanotechnology

Abstract:The atomic thickness of two-dimensional materials provides a unique opportunity to control their electrical 1 and optical 2 properties as well as to drive the electronic phase transitions 3 by electrostatic doping. The discovery of two-dimensional magnetic materials 4 – 10 has opened up the prospect of the electrical control of magnetism and the realization of new functional devices 11 . A recent experiment based on the linear magneto-electric effect has demonstrated control of the magnetic order in bilayer CrI 3 by electric fields 12 . However, this approach is limited to non-centrosymmetric materials 11 , 13 – 16 magnetically biased near the antiferromagnet–ferromagnet transition. Here, we demonstrate control of the magnetic properties of both monolayer and bilayer CrI 3 by electrostatic doping using CrI 3 –graphene vertical heterostructures. In monolayer CrI 3 , doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened/weakened magnetic order with hole/electron doping. Remarkably, in bilayer CrI 3 , the electron doping above ~2.5 × 10 13 cm −2 induces a transition from an antiferromagnetic to a ferromagnetic ground state in the absence of a magnetic field. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI 3 by small gate voltages.