Abstract:We conduct experimental studies on the electrical transport properties ofmonolayer graphene directly covered by a few layers of CrI_3. We do notobserve the expected magnetic exchange coupling in the graphene but insteaddiscover proximity effects featuring gate and magnetic field tunability. Thetunability of gate voltage is manifested in the alignment of the lowestconduction band of CrI_3 and the Fermi level of graphene, which can becontrolled by the gate voltage. The coexistence of the normal and atypicalquantum Hall effects in our device also corresponds to gate-control modulationdoping. The lowest conduction band depends on the magnetic states of the CrI_3 and can be altered by the magnetic field, which corresponds to theresistance loops during back-and-forth sweeps of the magnetic field. Ourresults serve as a reference for exploiting the magnetic proximity effects ingraphene.

Gate Control of 2D Magnetism in Tri- and Four-Layers CrI_3/graphene Heterostructures