Abstract:Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favours ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields—a longstanding technological goal in spintronics and multiferroics<a href="/articles/s41586-020-2963-8#ref-CR1">1</a>,<a href="/articles/s41586-020-2963-8#ref-CR2">2</a>—can be achieved only indirectly. Here we experimentally demonstrate direct electric-field control of magnetic states in an orbital Chern insulator<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41586-020-2963-8#ref-CR6">6</a>, a magnetic system in which non-trivial band topology favours long-range order of orbital angular momentum but the spins are thought to remain disordered<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41586-020-2963-8#ref-CR14">14</a>. We use van der Waals heterostructures consisting of a graphene monolayer rotationally faulted with respect to a Bernal-stacked bilayer to realize narrow and topologically non-trivial valley-projected moiré minibands<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="/articles/s41586-020-2963-8#ref-CR17">17</a>. At fillings of one and three electrons per moiré unit cell within these bands, we observe quantized anomalous Hall effects<a href="/articles/s41586-020-2963-8#ref-CR18">18</a> with transverse resistance approximately equal to h/2e2 (where h is Planck's constant and e is the charge on the electron), which is indicative of spontaneous polarization of the system into a single-valley-projected band with a Chern number equal to two. At a filling of three electrons per moiré unit cell, we find that the sign of the quantum anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover, this transition is hysteretic, which we use to demonstrate non-volatile electric-field-induced reversal of the magnetic state. A theoretical analysis<a href="/articles/s41586-020-2963-8#ref-CR19">19</a> indicates that the effect arises from the topological edge states, which drive a change in sign of the magnetization and thus a reversal in the favoured magnetic state. Voltage control of magnetic states can be used to electrically pattern non-volatile magnetic-domain structures hosting chiral edge states, with applications ranging from reconfigurable microwave circuit elements to ultralow-power magnetic memories.

Magnetic Exchange Field Modulation of Quantum Hall Ferromagnetism in 2D van der Waals CrCl 3 /Graphene Heterostructures

Magnetic Exchange Field Modulation of Quantum Hall Ferromagnetism in 2D Van Der Waals CrCl3/Graphene Heterostructures

Magnetic Proximity Effect in 2D Ferromagnetic CrBr3/Graphene van der Waals Heterostructures

Magnetic‐Electrical Synergetic Control of Non‐Volatile States in Bilayer Graphene‐CrOCl Heterostructures

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Proximity effects in Graphene and Ferromagnetic CrBr3 van der Waals Heterostructure

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures

Gate control of 2D magnetism in three- and four-layers CrI3/graphene heterostructures

Flavoured quantum Hall phase in graphene/CrOCl heterostructures

Gate Control of 2D Magnetism in Tri- and Four-Layers CrI_3/graphene Heterostructures

Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor

Electrical switching of magnetic order in an orbital Chern insulator

Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

Strong magnetization and Chern insulators in compressed graphene/CrI$_{3}$ van der Waals heterostructures

Robust Quantum Anomalous Hall Effect in Graphene-Based Van Der Waals Heterostructures

Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene

Ferroelectric and anomalous quantum Hall states in bare rhombohedral trilayer graphene

Exchange Bias in Van Der Waals CrCl3/Fe3GeTe2 Heterostructures.