Abstract:Topological insulators (TIs) have shown promise as a spin-generating layer to switch the magnetization state of ferromagnets via spin-orbit torque (SOT) due to charge-to-spin conversion efficiency of the TI surface states that arises from spin-momentum locking. However, when TIs are interfaced with conventional bulk ferromagnetic metals, the combination of charge transfer and hybridization can potentially destroy the spin texture and hamper the possibility of accessing the TI surface states. Here, we fabricate an all van der Waals (vdW) heterostructure consisting of molecular beam epitaxy grown bulk-insulating Bi2Se3 and exfoliated 2D metallic ferromagnet Fe3GeTe2 (FGT) with perpendicular anisotropy. By detecting the magnetization state of the FGT via anomalous Hall effect and magneto-optical Kerr effect measurements, we determine the critical switching current density for magnetization switching to be Jc ≈ 1.2 × 106 A/cm2, the lowest reported for the switching of a perpendicular anisotropy ferromagnet using Bi2Se3. From second harmonic Hall measurements, we further determine the SOT efficiency (ξDL) to be in the range of 1.8 ± 0.3 and 1.4 ± 0.08 between 5 and 150 K, comparable to the highest values reported for Bi2Se3. Our density functional theory calculations find that the weak interlayer interactions at the Bi2Se3/FGT interface lead to a weakened dipole at the interface and suppress the proximity induced magnetic moment on Bi2Se3. This enables direct access to the TI surface states contributed by the first quintuple layer, where the spins are singly degenerate with significant net in-plane spin polarization. Our results highlight the clear advantage of all-vdW heterostructures with weak interlayer interactions that can enhance SOT efficiency and minimize critical current density, an important step toward realizing next generation low-power nonvolatile memory and spintronic devices.

Robust ferroelectric-gating-dependent electronic and magnetic properties in a 1T-VSe2/BiAlO3(0001) multiferroic heterostructure

Tunable electronic and magnetic properties in 1 T-VSe2 monolayer on BiFeO3(0001) ferroelectric substrate

Modulation of electronic and magnetic properties of monolayer 1T-VSe2 by ferroelectric LiNbO3 (0001) surface

Ferroelectrically controlled electromagnetic and transport properties of VN2H2/Al2O3 van der Waals multiferroic heterostructures

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF

Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

Exchange interactions in 1T-VSe2 monolayer and their modulation by electron doping via alkali metal adsorption and electride substrate

Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Tunable Schottky barriers and magnetoelectric coupling driven by ferroelectric polarization reversal of MnI 3 /In 2 Se 3 multiferroic heterostructures

Controllable band offset in monolayer MoSe2 driven by surface termination and ferroelectric field of BiFeO3(0001) substrate

The Effect of Switchable Electronic Polarization States on the Electronic Properties of Two-dimensional Multiferroic TMBr2/Ga2SSe2 (TM=V-Ni) Heterostructures

Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

Electrostatic Modulation and Mechanism of the Electronic Properties of Monolayer MoS 2 via Ferroelectric BiAlO 3 (0001) Polar Surfaces

Realizing Ferromagnetism in a Field‐Effect Transistor Based on VSe2 Thin Flakes

Ferroelectric control of magnetic coupling of monolayer MnBr 2 in semiconducting multiferroic van der Waals heterostructure

Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures