Abstract:With the explosion of data-centric applications, the new in-memory computing technologies, based on nonvolatile memory devices, become competitive due to their merged logic-memory functionalities. Herein, employing first-principles quantum transport simulation, we theoretically investigate for the first time the electronic and contact properties of two types of monolayer (ML)-MoS2 ferroelectric field-effect transistors (FeFETs) integrated with ferroelectric BiAlO3(0001) (BAO(0001)) polar surfaces. Our study finds that the interfacial properties of the investigated partial FeFET devices are highly tunable by switching the electric polarization of ferroelectric BAO(0001) dielectric. Specifically, the transition from quasi-Ohmic to Schottky contact, as well as opposite contact polarity of respective n-type and p-type Schottky contact under two polarization states can be obtained, suggesting their superior performance metrics in terms of nonvolatile information storage. In addition, due to the feature of (quasi-)Ohmic contact in some polarization states, the explored FeFET devices, even when operating in regular field-effect transistor (FET) mode, can be extremely significative to realize a desirable low threshold voltage and interfacial contact resistance. In conjunction with the formed van der Waals (vdW) interfaces in ML-MoS2/ferroelectric systems with an interlayer, the proposed FeFETs are expected to can provide an excellent device performance with regards to cycling endurances and memory density.

Controllable band offset in monolayer MoSe2 driven by surface termination and ferroelectric field of BiFeO3(0001) substrate

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Electrostatic Modulation and Mechanism of the Electronic Properties of Monolayer MoS 2 via Ferroelectric BiAlO 3 (0001) Polar Surfaces

Tunable electronic and magnetic properties in 1 T-VSe2 monolayer on BiFeO3(0001) ferroelectric substrate

Robust ferroelectric-gating-dependent electronic and magnetic properties in a 1T-VSe2/BiAlO3(0001) multiferroic heterostructure

Optical Modulation of MoTe2/Ferroelectric Heterostructure Via Interface Doping

Optical Modulation of MoTe2/Ferroelectric Heterostructure via Interface Doping.

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Modulation of electronic and magnetic properties of monolayer 1T-VSe2 by ferroelectric LiNbO3 (0001) surface

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Interface robust magnetoelectric coupling effect in ferromagnetic/ferroelectric BiFeO3/KNbO3 heterostructure: First-principles calculations

Strong modulation of electronic properties of monolayer MoTe 2 using a ferroelectric LiNbO 3 (0001) substrate

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

The Electronic and Magnetic Properties Modulated by Ferroelectric Polarization Switching in Two-Dimensional VSeTe/Sc2CO2 Van Der Waals Heterostructures.

Nonvolatile ferromagnetism in bilayer Cr I 3 induced by a heterointerface

Integrating ferromagnetism and ferroelectricity in an iron chalcogenide monolayer: a first-principles study

Optical Modulation of MoTe 2 /Ferroelectric Heterostructure via Interface Doping

Magnetic-anisotropy modulation in multiferroic heterostructures by ferroelectric domains from first principles

Controllable magnetic anisotropy and ferroelasticity in superconducting FeSe monolayer with surface fluorine adsorption

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces