Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon GaN contacting with alpha-In2Se3, the structural stability demonstrates a direct dependence on the polarity assembly, as evidenced by the change of binding energy from -1.39/-1.83 eV in Ga-polarity to -2.99/-1.95 eV in N-polarity. In particular, the polarity inversion of GaN not only dictates the direction of charge transfer but also increases the electrostatic potential differences from 2.92/1.84 eV in N-polarity to 3.65/5.10 eV in Ga-polarity. Moreover, the interfacial polarization and electronic band profiles of alpha-In2Se3/GaN have been further adjusted by applying the external electric field. It is found that the interfacial dipole interaction plays a crucial role in the external electric field modulation, with a direct correlation to the charge distribution at alpha-In2Se3/GaN polar heterointerfaces. By sweeping the external electric field from -0.4 to 0.4 V/& Aring;, the alpha-In2Se3(up arrow)/GaN(up arrow) and alpha-In2Se3(down arrow)/GaN(up arrow) polar heterostructures maintain the type-III electronic band profiles, attributed to the electrostatic shielding effect of high-density charge carriers. However, the band alignments of alpha-In2Se3(up arrow)/GaN(down arrow) and alpha-In2Se3(down arrow)/GaN(down arrow) polar heterostructures have been extensively transformed from type-III, to type-II, and then to type-I. Our findings demonstrate the effective capability of polarity inversion and external electric field on manipulating dipole interactions of 2D/3D polar heterostructures, paving the way for the innovative design and optimization of next-generation optoelectronics, information memory, and neural computing applications.

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures

Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Bandstructure Engineering in 2D Materials Using Ferroelectric Materials

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Band structure, ferroelectric instability, and spin-orbital coupling effect of bilayer -In<sub>2</sub>Se<sub>3</sub>

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering

Tuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Band alignment engineering of a Ruddlesden–Popper perovskite-based heterostructure constructed using Cs 2 SnI 2 Cl 2 and α-In 2 Se 3 : The effects of ferroelectric polarization switching and electric fields

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Controllable Polarization and Doping in Ferroelectric In2Se3 Monolayers and Heterobilayers Via Intrinsic Defect Engineering