The Effect of Switchable Electronic Polarization States on the Electronic Properties of Two-dimensional Multiferroic TMBr2/Ga2SSe2 (TM=V-Ni) Heterostructures
Jinlian Lu,Nini Guo,Yuanyuan Duan,Shu Wang,Yuxuan Mao,yi sun,Lijuan Meng,Xiaojing Yao,Xiuyun Zhang
DOI: https://doi.org/10.1039/d3cp01590d
IF: 3.3
2023-07-26
Physical Chemistry Chemical Physics
Abstract:Multiferroic van der Waals (vdW) heterostructures (HSs) by combining different ferroic materials offer an exciting platform for next-generation nanoelectronic devices. In this work, we investigate magnetoelectric coupling properties of multiferroic vdW HSs consisted of magnetic TMBr2 (TM=V-Ni) monolayer and ferroelectric Ga2SSe2 monolayer using first-principles theory calculations. It is found that the magnetic orderings in the magnetic TMBr2 layers are robust and the band alignment of these TMBr2/Ga2SSe2 HSs can be altered by reversing the polarization direction of the ferroelectric layer. Among them, VBr2/Ga2SSe2 and FeBr2/Ga2SSe2 HSs can be switched from type-I to type-II semiconductor, which allows the generation of spin-polarized and unpolarized photocurrent. Besides, CrBr2/Ga2SSe2, CoBr2/Ga2SSe2 and NiBr2/Ga2SSe2 exhibit a type-II band alignments in reversal ferroelectric polarization states. Moreover, the magnetic configuration and band alignment of these TMBr2/Ga2SSe2 HSs can be further modulated by applying external strain. Our findings suggest the potential of TMBr2/Ga2SSe2 HSs in 2D multiferroic and spintronic applications.
chemistry, physical,physics, atomic, molecular & chemical